No. |
Part Name |
Description |
Manufacturer |
31 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
32 |
1MBH03D-120 |
Ratings and characterisitcs Fuji IGBT |
Fuji Electric |
33 |
1MBH05D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
34 |
1MBH05D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
35 |
1MBH08D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
36 |
1MBH10D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
37 |
1MBH10D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
38 |
1MBH15D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
39 |
1MBH50D-060S |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
40 |
1MBH75D-060 |
Ratings and characteristics of Fuji IGBT�� |
Fuji Electric |
41 |
1MBH75D-060S |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
42 |
1MBI400NB-060 |
Ratings and characteristics of Fuji IGBT Module |
Fuji Electric |
43 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
44 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
45 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
46 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
47 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
48 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
49 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
50 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
51 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
52 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
53 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
54 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
55 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
56 |
1N5520B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
57 |
1N5520B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
58 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
59 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
60 |
1N5522B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
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