| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 32 |
2N6084 |
12.5V 40W RF NPN transistor for VHF FM mobile applications |
SGS Thomson Microelectronics |
| 33 |
2N6084 |
175MHz 12.5V NPN RF Transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 34 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 35 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 36 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 37 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 38 |
2SC380 |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 39 |
2SC380A |
Silicon NPN planar transistor, FM IF (10.7MHz) amplifier applications |
TOSHIBA |
| 40 |
2SC381 |
Silicon NPN epitaxial planar transistor, FM IF Amplifier Application |
TOSHIBA |
| 41 |
2SC394 |
Silicon NPN planar transistor, high frequency amplifier, FM frequency converter applications |
TOSHIBA |
| 42 |
2SC460 |
Silicon NPN Planar Transistor, intended for use in AM RF Amplifier, Frequency Converter, FM IF Amplifier |
Hitachi Semiconductor |
| 43 |
2SC461 |
Silicon NPN Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 44 |
2SC535 |
Silicon NPN Epitaxial Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter, Local Oscillator |
Hitachi Semiconductor |
| 45 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 46 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 47 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 48 |
2SC930 |
AM Converter, FM RF.IF Amp Applications |
SANYO |
| 49 |
2SK1067 |
N-Channel Silicon MOSFET FM Tuner, VHF-Band Amplifier Applications |
SANYO |
| 50 |
2SK161 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 51 |
2SK1771 |
Field Effect Transistor Silicon N-Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 52 |
2SK192A |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 53 |
2SK210 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 54 |
2SK211 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 55 |
2SK212 |
N-Channel Junction Silicon FET FM Tuner Applications |
SANYO |
| 56 |
2SK241 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF and RF Amplifier Applications |
TOSHIBA |
| 57 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 58 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 59 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 60 |
2SK302 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| | | |
