No. |
Part Name |
Description |
Manufacturer |
31 |
2N5061G |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
32 |
2N5061RLR |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
33 |
2N5061RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
34 |
2N5061RLRM |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
35 |
2N5062G |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
36 |
2N5062RLRAG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
37 |
2N5064RLRMG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
38 |
2N6071 |
Sensitive Gate Triacs |
ON Semiconductor |
39 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
40 |
2N6071A |
Sensitive Gate Triacs |
ON Semiconductor |
41 |
2N6071B |
Sensitive Gate Triacs |
ON Semiconductor |
42 |
2N6071BT |
Sensitive Gate Triacs |
ON Semiconductor |
43 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
44 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
45 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
46 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
47 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
48 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
49 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
50 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
51 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
52 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
53 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
54 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
55 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
56 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
57 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
58 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
59 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
60 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
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