| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5003 |
3A Silicon high-conductance rectifier diode |
Motorola |
| 32 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 33 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 34 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 35 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 36 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 37 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 38 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 39 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 40 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 41 |
1N5155 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
| 42 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 43 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 44 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 45 |
1N5194 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
| 46 |
1N5195 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
| 47 |
1N5196 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
| 48 |
1PS300 |
Dual high-speed switching diode |
Nexperia |
| 49 |
1PS300 |
Dual high-speed switching diode |
NXP Semiconductors |
| 50 |
1PS301 |
Dual high-speed switching diode |
Nexperia |
| 51 |
1PS301 |
Dual high-speed switching diode |
NXP Semiconductors |
| 52 |
1PS302 |
Dual high-speed switching diode |
Nexperia |
| 53 |
1PS302 |
Dual high-speed switching diode |
NXP Semiconductors |
| 54 |
1S2237B |
Silicon diffused junction high-voltage rectifier, 18kV |
TOSHIBA |
| 55 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 56 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 57 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 58 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 59 |
1SS353 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
| 60 |
1SS354 |
Silicon Epitaxial Planar High-Speed Switching Diodes |
ROHM |
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