| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N358 |
Microwave L-X-band Detector |
Motorola |
| 32 |
1N358A |
Microwave L-X-band Detector |
Motorola |
| 33 |
1N630 |
Silicon Microwave L-X-band Detector |
Motorola |
| 34 |
2SC5288 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 35 |
2SC5288-T1 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 36 |
2SC5289 |
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
NEC |
| 37 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 38 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 39 |
AM1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 40 |
AM1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 41 |
AM1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 42 |
AM1011-070 |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 43 |
AM1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 44 |
AM1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 45 |
AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
| 46 |
AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
ST Microelectronics |
| 47 |
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
| 48 |
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS |
ST Microelectronics |
| 49 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 50 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 51 |
AM81214-006 |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
| 52 |
AN565 |
MEDIAN-TIME-TO-FAILURE (MTF) OF A L-BAND POWER TRANSISTOR UNDER RF CONDITIONS |
SGS Thomson Microelectronics |
| 53 |
BLL6G1214L-250 |
LDMOS L-band radar power transistor |
NXP Semiconductors |
| 54 |
BLL6G1214LS-250 |
LDMOS L-band radar power transistor |
NXP Semiconductors |
| 55 |
BLL6H1214-500 |
LDMOS L-band radar power transistor |
NXP Semiconductors |
| 56 |
BLL6H1214L-250 |
LDMOS L-band radar power transistor |
NXP Semiconductors |
| 57 |
BLL6H1214LS-250 |
LDMOS L-band radar power transistor |
NXP Semiconductors |
| 58 |
BLL6H1214LS-500 |
LDMOS L-band radar power transistor |
NXP Semiconductors |
| 59 |
CGHV14250 |
250W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
Wolfspeed |
| 60 |
CGHV14500 |
500W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems |
Wolfspeed |
| | | |
