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Datasheets for LINEAR

Datasheets found :: 20090
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No. Part Name Description Manufacturer
31 1N753A 6.2 V, 400 mW silicon linear diode BKC International Electronics
32 1N754 6.8 V, 400 mW silicon linear diode BKC International Electronics
33 1N754 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). Fairchild Semiconductor
34 1N754A 6.8 V, 400 mW silicon linear diode BKC International Electronics
35 1N755 7.5 V, 400 mW silicon linear diode BKC International Electronics
36 1N755 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). Fairchild Semiconductor
37 1N755A 7.5 V, 400 mW silicon linear diode BKC International Electronics
38 1N756 8.2 V, 400 mW silicon linear diode BKC International Electronics
39 1N756 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). Fairchild Semiconductor
40 1N756A 8.2 V, 400 mW silicon linear diode BKC International Electronics
41 1N757 9.1 V, 400 mW silicon linear diode BKC International Electronics
42 1N757 500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). Fairchild Semiconductor
43 1N757A 9.1 V, 400 mW silicon linear diode BKC International Electronics
44 1N758 10 V, 400 mW silicon linear diode BKC International Electronics
45 1N758 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). Fairchild Semiconductor
46 1N758A 10 V, 400 mW silicon linear diode BKC International Electronics
47 1N759 12 V, 400 mW silicon linear diode BKC International Electronics
48 1N759 500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). Fairchild Semiconductor
49 1N759A 12 V, 400 mW silicon linear diode BKC International Electronics
50 20L08 2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
51 20L15 2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
52 2100 2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
53 278R12 BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 2A OUTPUT LOW DROP VOLTAGE REGULATOR) Korea Electronics (KEC)
54 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
55 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
56 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
57 2N3440S Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications SGS-ATES
58 2N3445 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
59 2N3446 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola
60 2N3447 NPN silicon power transistor, fast response, wide band and good Beta linearity Motorola


Datasheets found :: 20090
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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