No. |
Part Name |
Description |
Manufacturer |
31 |
1N753A |
6.2 V, 400 mW silicon linear diode |
BKC International Electronics |
32 |
1N754 |
6.8 V, 400 mW silicon linear diode |
BKC International Electronics |
33 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
34 |
1N754A |
6.8 V, 400 mW silicon linear diode |
BKC International Electronics |
35 |
1N755 |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
36 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
37 |
1N755A |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
38 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
39 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
40 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
41 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
42 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
43 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
44 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
45 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
46 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
47 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
48 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
49 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
50 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
51 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
52 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
53 |
278R12 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 2A OUTPUT LOW DROP VOLTAGE REGULATOR) |
Korea Electronics (KEC) |
54 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
55 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
56 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
57 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
58 |
2N3445 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
59 |
2N3446 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
60 |
2N3447 |
NPN silicon power transistor, fast response, wide band and good Beta linearity |
Motorola |
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