| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N754A |
6.8 V, 400 mW silicon linear diode |
BKC International Electronics |
| 32 |
1N755 |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
| 33 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 34 |
1N755A |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
| 35 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 36 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 37 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 38 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 39 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 40 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 41 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 42 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 43 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 44 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 45 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 46 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 47 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 48 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 49 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 50 |
278R12 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (4 TERMINAL 2A OUTPUT LOW DROP VOLTAGE REGULATOR) |
Korea Electronics (KEC) |
| 51 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 52 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 53 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 54 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 55 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 56 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 57 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 58 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 59 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 60 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
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