| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MJE205 |
5A Medium Power NPN silicon transistor, 50V, 65W, complementary to PNP MJE105 |
Motorola |
| 32 |
MJE243 |
15.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 4.000A Ic, 40 - 180 hFE. Complementary MJE253 |
Continental Device India Limited |
| 33 |
MJE2801 |
10 Ampere High-Power NPN Silicon Transistor 60V 90W complementary to PNP MJE2901 |
Motorola |
| 34 |
MJE2901 |
10 Ampere High-Power PNP Silicon Transistor 60V 90W complementary to NPN MJE2801 |
Motorola |
| 35 |
MJE2955 |
10 Ampere PNP Silicon Power Transistor 60 Volts, 90 Watts, complement to MJE3055 |
Motorola |
| 36 |
MJE3055 |
10 Ampere NPN Power Transistor 60 Volts, 90 Watts, plastic version of 2N3055, complementary to MJE2955 |
Motorola |
| 37 |
MJE340 |
20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE350 |
Continental Device India Limited |
| 38 |
MJE350 |
20.000W Switching PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE340 |
Continental Device India Limited |
| 39 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 40 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 41 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 42 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 43 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 44 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 45 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 46 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 47 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 48 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 49 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 50 |
STGD20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 51 |
STGP18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 52 |
STGP35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 53 |
SU377 |
Si-npn power switching transistors for switching power supplies and general application, possibly equivalent MJE13004 |
RFT |
| 54 |
SU378 |
Si-npn power switching transistors for switching power supplies and general application, possibly equivalent MJE13005 |
RFT |
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