| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 32 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 33 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
| 34 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
| 35 |
2SA983 |
Application Note - Typical application - RF amplifier of UHF TV tuner |
NEC |
| 36 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 37 |
2SC2353 |
Application Note - typical application for UHF TV tuner mixer |
NEC |
| 38 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 39 |
2SC3355 |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series - Application Note |
NEC |
| 40 |
3SK74 |
Application Note - typical application - VHF tuner mixer |
NEC |
| 41 |
3SK74 |
Application Note - typical application - VHF tuner RF amplifier |
NEC |
| 42 |
4-LAYER DIODES |
Application Notes |
ITT Semiconductors |
| 43 |
40290 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 44 |
40291 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 45 |
40292 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 46 |
47N227 |
100 Pin Super I/O with LPC Interface for Notebook Applications |
SMSC Corporation |
| 47 |
4J100-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 48 |
4J100-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 49 |
4J200-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 50 |
4J200-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 51 |
4J50-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 52 |
4J50-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 53 |
5962F9583403QXA |
LVDS quad receiver:SMD. QML class Q. Total dose 3E5 rad(Si). Lead finish not solder dipped. |
Aeroflex Circuit Technology |
| 54 |
5962F9583403VXA |
LVDS quad receiver:SMD. QML class V. Total dose 3E5 rad(Si). Lead finish not solder dipped. |
Aeroflex Circuit Technology |
| 55 |
885008 |
2440 MHz RF BAW Notch Filter - Wi-Fi / LTE Coexistence |
Qorvo |
| 56 |
885010 |
2440 MHz RF BAW Notch Filter - Wi-Fi / Long-Term Evolution Coexistence |
Qorvo |
| 57 |
93C86 |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 58 |
93C86-E/P |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 59 |
93C86-E/SN |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 60 |
93C86T-E/SN |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
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