No. |
Part Name |
Description |
Manufacturer |
31 |
105NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
32 |
106NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
33 |
107NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
34 |
1132-5 |
450-512MHz CLASS C 12.5V 0.6W NPN transistor for mobile applications |
SGS Thomson Microelectronics |
35 |
1206B102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
36 |
1206B104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
37 |
1206F102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
38 |
1206F104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
39 |
1206N102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
40 |
1206N104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
41 |
1210B102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
42 |
1210B104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
43 |
1210F102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
44 |
1210F104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
45 |
1210N102XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
46 |
1210N104XXX |
Multilayer Ceramic Chip Capacitors Products NPO, X7R, Y5V |
American Accurate Components |
47 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
48 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
49 |
1318 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
50 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
51 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
52 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
53 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
54 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
55 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
56 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
57 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
58 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
59 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
60 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
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