No. |
Part Name |
Description |
Manufacturer |
31 |
2SB977A |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
32 |
2SB977A |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
33 |
2SB977A |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
34 |
2SC1547 |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
35 |
2SC1547 |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
36 |
2SC1547 |
2SB970 Si PNP EPITAXIAL PLANAR / 2SB977 2SB977A Si PNP EPITAXIAL PLANAR DARLINGTON / 2SC1547 Si NPN PLANAR |
Panasonic |
37 |
3SK176A |
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
38 |
3SK222 |
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
39 |
3SK223 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
40 |
3SK224 |
RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
41 |
3SK252 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
42 |
3SK253 |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
43 |
3SK254 |
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
44 |
3SK255 |
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
45 |
3WN166 24 |
Receiver modul with Si diode |
Tesla Elektronicke |
46 |
ACD2202 |
The ACD2202 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... |
Anadigics Inc |
47 |
ACD2203 |
The ACD2203 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... |
Anadigics Inc |
48 |
ACD2204 |
The ACD2204 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... |
Anadigics Inc |
49 |
ACD2206 |
The ACD2206 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner ... |
Anadigics Inc |
50 |
AN1352 |
A LNA OPTIMIZED FOR HIGH IP3OUT AT 1.9GHZ USING THE NPN SI START420 TRANSISTOR |
SGS Thomson Microelectronics |
51 |
AN1465 |
A LNA OPTIMIZED FOR HIGH IP3OUT AT 1.9GHZ USING THE NPN SI START540 TRANSISTOR |
SGS Thomson Microelectronics |
52 |
AN1541 |
A MEDIUM POWER AMPLIFIER AT 1.8GHZ USING THE NPN SI START499 TRANSISTOR |
SGS Thomson Microelectronics |
53 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
54 |
BGA7350 |
50 MHz to 250 MHz high linearity Si variable gain amplifier; 24 dB gain range |
NXP Semiconductors |
55 |
BGA7351 |
50 MHz to 500 MHz high linearity Si variable gain amplifier; 28 dB gain range |
NXP Semiconductors |
56 |
C2281 |
Supply voltage:+-9V; Si photodiode with BNC connector |
Hamamatsu Corporation |
57 |
C8366 |
Supply voltage: +-18V; current-to-voltage conversionphotosensor amplifier for high-speed Si PIN photodiode |
Hamamatsu Corporation |
58 |
C9004 |
Driver circuit for Si photodiode array |
Hamamatsu Corporation |
59 |
LC7151 |
C MOS Si Gate IC Meeting FCC 10-Channel Standard PLL for Cordless Telephone |
SANYO |
60 |
MA4ST200 |
Low-Voltage / High Q Si Hyperabrupt Varactors |
Tyco Electronics |
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