| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4446 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 32 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 33 |
1N4447 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 34 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 35 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 36 |
1N4448 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 37 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 38 |
1N4449 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 39 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 40 |
1N4454 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 41 |
1N4531 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 42 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 43 |
1N914 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 44 |
1N914A |
Silicon signal diode - high speed switching |
SESCOSEM |
| 45 |
1N914B |
Silicon signal diode - high speed switching |
SESCOSEM |
| 46 |
1N916 |
Silicon signal diode - high speed switching |
SESCOSEM |
| 47 |
1N916A |
Silicon signal diode - high speed switching |
SESCOSEM |
| 48 |
1N916B |
Silicon signal diode - high speed switching |
SESCOSEM |
| 49 |
1N995 |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
| 50 |
1S1219H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 51 |
1S1220H |
Silicon Epitaxial Planar Diode, used for High Speed Switching |
Hitachi Semiconductor |
| 52 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 53 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 54 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 55 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 56 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 57 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 58 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 59 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 60 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
| | | |
