No. |
Part Name |
Description |
Manufacturer |
31 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
32 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
33 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
34 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
35 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
36 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
37 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
38 |
20DK |
Heavy Duty High Voltage Capacitors |
Vishay |
39 |
20DKD10 |
Heavy Duty High Voltage Capacitors |
Vishay |
40 |
20DKD13 |
Heavy Duty High Voltage Capacitors |
Vishay |
41 |
20DKD25 |
Heavy Duty High Voltage Capacitors |
Vishay |
42 |
20DKD33 |
Heavy Duty High Voltage Capacitors |
Vishay |
43 |
20DKD47 |
Heavy Duty High Voltage Capacitors |
Vishay |
44 |
20DKD68 |
Heavy Duty High Voltage Capacitors |
Vishay |
45 |
20DKT50 |
Heavy Duty High Voltage Capacitors |
Vishay |
46 |
20KT |
Heavy Duty High Voltage Capacitors |
Vishay |
47 |
20KTD10 |
Heavy Duty High Voltage Capacitors |
Vishay |
48 |
20KTD19 |
Heavy Duty High Voltage Capacitors |
Vishay |
49 |
20KTD27 |
Heavy Duty High Voltage Capacitors |
Vishay |
50 |
20KTT56 |
Heavy Duty High Voltage Capacitors |
Vishay |
51 |
20KTXXX |
Heavy Duty High Voltage Capacitors |
Vishay |
52 |
28LV256JC-3 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
53 |
28LV256JC-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
54 |
28LV256JC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
55 |
28LV256JC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
56 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
57 |
28LV256JC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
58 |
28LV256JC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
59 |
28LV256JC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
60 |
28LV256JI-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
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