DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for VOLTAGE C

Datasheets found :: 4756
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1N943B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V Motorola
32 1N944 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V Motorola
33 1N944A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V Motorola
34 1N944B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V Motorola
35 1N945 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V Motorola
36 1N945A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V Motorola
37 1N945B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V Motorola
38 20DK Heavy Duty High Voltage Capacitors Vishay
39 20DKD10 Heavy Duty High Voltage Capacitors Vishay
40 20DKD13 Heavy Duty High Voltage Capacitors Vishay
41 20DKD25 Heavy Duty High Voltage Capacitors Vishay
42 20DKD33 Heavy Duty High Voltage Capacitors Vishay
43 20DKD47 Heavy Duty High Voltage Capacitors Vishay
44 20DKD68 Heavy Duty High Voltage Capacitors Vishay
45 20DKT50 Heavy Duty High Voltage Capacitors Vishay
46 20KT Heavy Duty High Voltage Capacitors Vishay
47 20KTD10 Heavy Duty High Voltage Capacitors Vishay
48 20KTD19 Heavy Duty High Voltage Capacitors Vishay
49 20KTD27 Heavy Duty High Voltage Capacitors Vishay
50 20KTT56 Heavy Duty High Voltage Capacitors Vishay
51 20KTXXX Heavy Duty High Voltage Capacitors Vishay
52 28LV256JC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
53 28LV256JC-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
54 28LV256JC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
55 28LV256JC-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
56 28LV256JC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
57 28LV256JC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
58 28LV256JC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
59 28LV256JC-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
60 28LV256JI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 4756
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



© 2024 - www Datasheet Catalog com