| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1.5KE200 |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 32 |
1.5KE200A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 190V(min), 210V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 33 |
1.5KE200A |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 34 |
1.5KE200C |
Transient voltage suppressor. 1500 W. Breakdown voltage 180.0 V(min), 220.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 35 |
1.5KE200CA |
1500 Watt mosorb zener transient voltage suppressors, 200V |
ON Semiconductor |
| 36 |
1.5KE200CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 37 |
1.5KE200CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 200V |
ON Semiconductor |
| 38 |
1.5KE220 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 198V(min), 242V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 39 |
1.5KE220 |
Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 40 |
1.5KE220A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 209V(min), 231V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 41 |
1.5KE220A |
Transient voltage suppressor. 1500 W. Breakdown voltage 209.0 V(min), 231.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 42 |
1.5KE220C |
Transient voltage suppressor. 1500 W. Breakdown voltage 198.0 V(min), 242.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 43 |
1.5KE220CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 209.0 V(min), 231.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 44 |
1.5KE220CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 220V |
ON Semiconductor |
| 45 |
1.5KE250 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 225V(min), 275V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 46 |
1.5KE250A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 47 |
1.5KE250C |
Transient voltage suppressor. 1500 W. Breakdown voltage 225.0 V(min), 275.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 48 |
1.5KE250CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 237.0 V(min), 263.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 49 |
1.5KE250CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 250V |
ON Semiconductor |
| 50 |
101 |
1 W, 28 V, 500-1200 MHz common base transistor |
GHz Technology |
| 51 |
1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor |
GHz Technology |
| 52 |
1014-2 |
2 W, 28 V, 1000-1400 MHz common base transistor |
GHz Technology |
| 53 |
101A |
1 W, 28 V, 500-1200 MHz common base transistor |
GHz Technology |
| 54 |
10A015 |
1.5 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
| 55 |
10A030 |
3 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
| 56 |
10A060 |
6 W, 20 V, 1000 MHz common emitter transistor |
GHz Technology |
| 57 |
11691D |
11691D Coaxial Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 58 |
11692D |
11692D Coaxial Dual-Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 59 |
1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor |
GHz Technology |
| 60 |
1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor |
GHz Technology |
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