No. |
Part Name |
Description |
Manufacturer |
31 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
32 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
33 |
2N3020 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, A Ic, 30 - 100 hFE. |
Continental Device India Limited |
34 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
35 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
36 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
37 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
38 |
2N4923 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
39 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
40 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
41 |
2N5301 |
40 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
42 |
2N5302 |
60 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
43 |
2N5303 |
80 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
44 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
45 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
46 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
47 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
48 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
49 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
50 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
51 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
52 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
53 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
54 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
55 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
56 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
57 |
74LVC162245ADGG |
16-bit transceiver with direction pin, 30 Ω series termination resistors; 5 V tolerant input/output; 3-state |
NXP Semiconductors |
58 |
74LVC162245ADL |
16-bit transceiver with direction pin, 30 Ω series termination resistors; 5 V tolerant input/output; 3-state |
NXP Semiconductors |
59 |
74LVCH162245ADGG |
16-bit transceiver with direction pin, 30 Ω series termination resistors; 5 V tolerant input/output; 3-state |
NXP Semiconductors |
60 |
74LVCH162245ADL |
16-bit transceiver with direction pin, 30 Ω series termination resistors; 5 V tolerant input/output; 3-state |
NXP Semiconductors |
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