| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 32 |
1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage, High Speed Switching Applications |
TOSHIBA |
| 33 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 34 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 35 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 36 |
2322 633 3/5/8. . . . |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 37 |
23226333 |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 38 |
23226335 |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 39 |
23226338 |
NTC Thermistors, High Temperature Sensors |
Vishay |
| 40 |
2404BG |
Hybrid Circuit Operational Amplifier, low power, high voltage |
Amelco Semiconductor |
| 41 |
2405BG |
Hybrid Circuit Operational Amplifier, low power, high voltage |
Amelco Semiconductor |
| 42 |
281 |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 43 |
284J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 44 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 45 |
286J |
High CMV, High Performance Isolation Amplifiers |
Intronics |
| 46 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 47 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 48 |
2N1487 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 49 |
2N1488 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 50 |
2N1489 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 51 |
2N1490 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 52 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 53 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 54 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 55 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 56 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 57 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 58 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 59 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 60 |
2N2152 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
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