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Datasheets for , I

Datasheets found :: 16123
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1N5404-G General Purpose Rectifier, VRRM=400V, VR=400V, IO=3A Comchip Technology
32 1N5406-G General Purpose Rectifier, VRRM=600V, VR=600V, IO=3A Comchip Technology
33 1N5407-G General Purpose Rectifier, VRRM=800V, VR=800V, IO=3A Comchip Technology
34 1N5408-G General Purpose Rectifier, VRRM=1000V, VR=1000V, IO=3A Comchip Technology
35 1N5817-G Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=1A Comchip Technology
36 1N5818-G Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=1A Comchip Technology
37 1N5819-G Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=1A Comchip Technology
38 1N5820-G Schottky Barrier Rectifiers Diodes, VRRM=20V, VR=20V, IO=3A Comchip Technology
39 1N5821-G Schottky Barrier Rectifiers Diodes, VRRM=30V, VR=30V, IO=3A Comchip Technology
40 1N5822-G Schottky Barrier Rectifiers Diodes, VRRM=40V, VR=40V, IO=3A Comchip Technology
41 1N77A Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V Motorola
42 1N77B Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V Motorola
43 1S2074H Silicon Epitaxial Plana Diode, intended for use in High Speed Switching Hitachi Semiconductor
44 1S2076 Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V Hitachi Semiconductor
45 1S2076A Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V Hitachi Semiconductor
46 1S2090 Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC Hitachi Semiconductor
47 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
48 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
49 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
50 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
51 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
52 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
53 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
54 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
55 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
56 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
57 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
58 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
59 1S689 Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
60 1S689A Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor


Datasheets found :: 16123
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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