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Datasheets found :: 6515
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No. Part Name Description Manufacturer
31 1S753H Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source Hitachi Semiconductor
32 1S754H Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
33 1S755H Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
34 1S756H Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
35 1S757H Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
36 1S758H Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
37 1S759H Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
38 1S760H Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
39 1S761H Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
40 1S762H Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
41 1S763H Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
42 1S764H Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
43 1S765H Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
44 1S77H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
45 1S78H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
46 1S79H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
47 1S80 Germanium Point Contact Diode, intended for use as a General Detector Hitachi Semiconductor
48 2KBP005M 50 V, 2 A, in-line glass passivated single phase rectifier bridge TRANSYS Electronics Limited
49 2N3375 Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting Philips
50 2N3632 Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting Philips
51 2N5324 PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications Motorola
52 2N5325 PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications Motorola
53 2SA12 Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
54 2SA12H Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
55 2SA15 Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter Hitachi Semiconductor
56 2SA15H Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier Hitachi Semiconductor
57 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
58 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
59 2SA234 Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter Hitachi Semiconductor
60 2SA235 Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter Hitachi Semiconductor


Datasheets found :: 6515
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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