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Datasheets for -0.1

Datasheets found :: 52
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No. Part Name Description Manufacturer
31 MAX9929 -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
32 MAX9929FABS+TG45 -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
33 MAX9929FABT+ -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
34 MAX9929FABT+G45 -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
35 MAX9929FABT+T -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
36 MAX9929FABT+TG45 -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
37 MAX9929FAUA+ -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
38 MAX9929FAUA+T -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
39 MAX9929TABS+TG45 -0.1V to +28V Input Range, Micropower, Uni-/Bidirectional, Current-Sense Amplifiers MAXIM - Dallas Semiconductor
40 STB25NM60N N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET ST Microelectronics
41 STB25NM60N-1 N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET ST Microelectronics
42 STB25NM60NT4 N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET ST Microelectronics
43 STF25NM60N N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET ST Microelectronics
44 STP25NM60N N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET ST Microelectronics
45 STW25NM60N N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET ST Microelectronics
46 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
47 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
48 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
49 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
50 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
51 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
52 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA


Datasheets found :: 52
Page: | 1 | 2 |



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