No. |
Part Name |
Description |
Manufacturer |
31 |
ISPLSI2064V-60LT44I |
3.3V High Density Programmable Logic |
Lattice Semiconductor |
32 |
ISPLSI81080V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
33 |
ISPLSI81080V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
34 |
ISPLSI8600V-60LB272 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
35 |
ISPLSI8600V-60LB492 |
3.3V In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
36 |
ISPLSI8840-60LB432 |
In-System Programmable SuperBIG High Density PLD |
Lattice Semiconductor |
37 |
LP62E16256CU-60LLT |
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM |
AMIC Technology |
38 |
LP62E16256CV-60LLT |
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM |
AMIC Technology |
39 |
M27C1001-60L1TR |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
40 |
M27C1001-60L1X |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
41 |
M27C1001-60L3TR |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
42 |
M27C1001-60L3X |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
43 |
M27C1001-60L6TR |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
44 |
M27C1001-60L6X |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
45 |
MB82D01181E-60L |
Products psuedo-SRAM complying to COSMORAM standards |
Fujitsu Microelectronics |
46 |
PLSI1032-60LG_883 |
High-density programmable logic, 20ns |
Lattice Semiconductor |
47 |
PLSI1032-60LJ |
High-density programmable logic, 20ns |
Lattice Semiconductor |
48 |
PLSI1032-60LJI |
High-density programmable logic, 20ns |
Lattice Semiconductor |
49 |
PLSI1032-60LT |
High-density programmable logic, 20ns |
Lattice Semiconductor |
50 |
PSMN014-60LS |
N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET |
NXP Semiconductors |
| | | |