Datasheets for -CLA

Datasheets found :: 111 Page: | 1 | 2 | 3 | 4 |

No.	Part Name	Description	Manufacturer
31	IXFN73N30Q	HiPerFET Power MOSFETs Q-Class	IXYS Corporation
32	IXFR27N80Q	HiPerFET Power MOSFETs Q-CLASS	IXYS Corporation
33	IXFR55N50F	HiPerRF Power MOSFETs F-Class: MegaHertz Switching	IXYS Corporation
34	IXFT12N50F	HiPerRF Power MOSFETs F-Class: MegaHertz Switching	IXYS Corporation
35	IXFT16N90Q	HiPerFET Power MOSFETs Q-Class	IXYS Corporation
36	IXFT20N80Q	HiPerFETTM Power MOSFETs Q-Class	IXYS Corporation
37	IXFT28N50F	HiPerRF Power MOSFETs F-Class: MegaHertz Switching	IXYS Corporation
38	IXFT60N25Q	HiPerFET Power MOSFETs Q-Class	IXYS Corporation
39	IXFT66N20Q	HiPerFET Power MOSFETs Q-Class	IXYS Corporation
40	IXFT9N80Q	HiPerFET Power MOSFETs Q-Class	IXYS Corporation
41	IXFX21N100F	HiPerRF Power MOSFETs F-Class: MegaHertz Switching	IXYS Corporation
42	IXFX27N80Q	HiPerFET Power MOSFETs Q-CLASS	IXYS Corporation
43	IXFX44N50F	HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die	IXYS Corporation
44	IXFX60N55Q2	HiPerFET Power MOSFETs Q-Class	IXYS Corporation
45	IXFX73N30Q	HiPerFET Power MOSFETs Q-CLASS	IXYS Corporation
46	IXFX90N20Q	HiPerFETTM Power MOSFETs Q-CLASS	IXYS Corporation
47	LINEAR DIAPHRAGM PATTERNS	Transducer-Class® Strain Gages	Vishay
48	LINEAR PATTERNS - DUAL GRID	Transducer-Class® Strain Gages	Vishay
49	LINEAR PATTERNS - SINGLE GRID	Transducer-Class® Strain Gages	Vishay
50	M470L2923BN0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
51	M470L2923BNV0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
52	M470L3223DT0-CLA0	256MB DDR SDRAM MODULE	Samsung Electronic
53	M470L3223DT0-CLA2	256MB DDR SDRAM MODULE	Samsung Electronic
54	M470L3324BT0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
55	M470L3324BT0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
56	M470L3324BTU0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
57	M470L6524BT0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
58	M470L6524BTU0-CLA2	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die	Samsung Electronic
59	MAX17598	Low-IQ Wide-Input-Range Active-Clamp Current-Mode PWM Controllers	MAXIM - Dallas Semiconductor
60	MAX17598ATE+	Low-IQ Wide-Input-Range Active-Clamp Current-Mode PWM Controllers	MAXIM - Dallas Semiconductor

Datasheets found :: 111 Page: | 1 | 2 | 3 | 4 |