No. |
Part Name |
Description |
Manufacturer |
31 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
32 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
33 |
2N1595 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
34 |
2N1596 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
35 |
2N1597 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
36 |
2N1598 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
37 |
2N1599 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
38 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
39 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
40 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
41 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
42 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
43 |
2N2195 |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
44 |
2N2195A |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
45 |
2N2195B |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
46 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
47 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
48 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
49 |
2N2368 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
50 |
2N2368S |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
51 |
2N2369 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
52 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
53 |
2N2369A |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
54 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
55 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
56 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
57 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
58 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
59 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
60 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
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