No. |
Part Name |
Description |
Manufacturer |
31 |
K4S641632C-TC75 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 133MHz |
Samsung Electronic |
32 |
K4S641632E-TC70 |
64Mbit SDRAM |
Samsung Electronic |
33 |
K4S641632E-TC75 |
64Mbit SDRAM |
Samsung Electronic |
34 |
K4S641632F-TC70 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
35 |
K4S641632F-TC75 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
36 |
K4S641632H-TC70 |
64Mb H-die SDRAM Specification |
Samsung Electronic |
37 |
K4S641632H-TC75 |
64Mb H-die SDRAM Specification |
Samsung Electronic |
38 |
K4S643232C-TC70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
39 |
K4S643232E-TC70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
40 |
K4S643232F-TC70 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
41 |
K4S643232H-TC70 |
64Mb H-die (x32) SDRAM Specification |
Samsung Electronic |
42 |
MAX5026EUT-TC71 |
500kHz, 36V Output, SOT23, PWM Step-Up DC-DC Converters |
MAXIM - Dallas Semiconductor |
43 |
MAX6029EUK25-TC72 |
Ultra-Low-Power Precision Series Voltage Reference |
MAXIM - Dallas Semiconductor |
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