| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HMC121 |
Voltage -variable attenuator DC- 15 GHz |
Hittite Microwave Corporation |
| 32 |
HMC121C8 |
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz |
Hittite Microwave Corporation |
| 33 |
HMC121G8 |
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 8 GHz |
Hittite Microwave Corporation |
| 34 |
HMC210MS8 |
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 1.5 - 2.3 GHz |
Hittite Microwave Corporation |
| 35 |
HMC346 |
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz |
Hittite Microwave Corporation |
| 36 |
HMC346LP3 |
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 14 GHz |
Hittite Microwave Corporation |
| 37 |
HMC346MS8G |
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR, DC - 8 GHz |
Hittite Microwave Corporation |
| 38 |
HMC473MS8 |
GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz |
Hittite Microwave Corporation |
| 39 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 40 |
KP1830 |
C-values 100 pF - 0.033 µF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 41 |
KP1836 |
C-values 100 pF - 0.22 µF, Voltage 630 - 2000 VDC, Very high current and pulse load, Low losses, PCM 15-37.5 |
Vishay |
| 42 |
LA5416-VAW |
Hyper 5 mm (T1 3/4) LED, non diffused... |
Infineon |
| 43 |
LO5426-VAW |
Hyper 5 mm (T1 3/4) LED, non diffused... |
Infineon |
| 44 |
LY5426-VAW |
Hyper 5 mm (T1 3/4) LED, non diffused... |
Infineon |
| 45 |
MAX2642 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 46 |
MAX2642EXT |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 47 |
MAX2642EXT+ |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 48 |
MAX2642EXT+T |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 49 |
MAX2643 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 50 |
MAX2643EXT |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 51 |
MAX2643EXT+ |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 52 |
MAX2643EXT+T |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier |
MAXIM - Dallas Semiconductor |
| 53 |
MKC 1858 |
C-values 0.01 µF - 0.33 µF, Voltage 63 - 100 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 54 |
MKC 1860 |
C-values 0.01 µF - 10 µF, Voltage 63 - 400 VDC, Flat and linear TC, Low profile, AXIAL |
Vishay |
| 55 |
MKC 1862 |
C-values 0.01 µF - 10 µF, Voltage 63 - 400 VDC, Flat and linear TC, PCM 10-27.5 |
Vishay |
| 56 |
MKI 1810 |
Box encapsulated capacitor for surface mounting , C-values 1000 pF-10 µF, 50 - 400 VDC, Code sizes 2220, 2824, 4036, 5045, 6560, Tape and Reel packaging |
Vishay |
| 57 |
MKP 1837 |
C-values 0.01 µF - 0.1 µF, Voltage 160 VDC, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 58 |
MKP 1839 |
C-values 1000 pF - 10 µF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL |
Vishay |
| 59 |
MKP 1840 |
C-values 4700 pF - 10 µF, Voltage 100 - 630 VDC, Low losses, Low dielectric absorption, PCM 5-37.5 |
Vishay |
| 60 |
MKP 1841 |
C-values 470 pF - 6.8 µF, Voltage 160 - 2000 VDC, Low losses, High current and pulse load, PCM 7.5-37.5 |
Vishay |
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