No. |
Part Name |
Description |
Manufacturer |
31 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
32 |
2N5301 |
High current, high power, high speed N-P-N power transistor. 40V, 200W. |
General Electric Solid State |
33 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
34 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
35 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
36 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
37 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
38 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
39 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
40 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
41 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
42 |
2N6343A |
12-A silicon triac. 400 V. |
General Electric Solid State |
43 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
44 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
45 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
46 |
2N6486 |
75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
47 |
2N6489 |
75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
48 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
49 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
50 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
51 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
52 |
5962F9689104QXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
53 |
5962F9689104QXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
54 |
5962F9689104QXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
55 |
5962F9689104QYA |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
56 |
5962F9689104QYC |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
57 |
5962F9689104QYX |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
58 |
5962F9689104VXA |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
59 |
5962F9689104VXC |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
60 |
5962F9689104VXX |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). |
Aeroflex Circuit Technology |
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