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Datasheets for . 40

Datasheets found :: 265
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No. Part Name Description Manufacturer
31 2N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
32 2N5301 High current, high power, high speed N-P-N power transistor. 40V, 200W. General Electric Solid State
33 2N5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
34 2N5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
35 2N5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
36 2N5366 Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. General Electric Solid State
37 2N6034 W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
38 2N6037 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
39 2N6039 W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
40 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
41 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
42 2N6343A 12-A silicon triac. 400 V. General Electric Solid State
43 2N6347A 12-A silicon triac. 400 V. General Electric Solid State
44 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
45 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
46 2N6486 75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. Continental Device India Limited
47 2N6489 75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. Continental Device India Limited
48 2N6715 0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE Continental Device India Limited
49 2N6727 0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE Continental Device India Limited
50 2N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. Continental Device India Limited
51 2N697 0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. Continental Device India Limited
52 5962F9689104QXA Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
53 5962F9689104QXC Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
54 5962F9689104QXX Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
55 5962F9689104QYA Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
56 5962F9689104QYC Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
57 5962F9689104QYX Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
58 5962F9689104VXA Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
59 5962F9689104VXC Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si). Aeroflex Circuit Technology
60 5962F9689104VXX Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si). Aeroflex Circuit Technology


Datasheets found :: 265
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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