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Datasheets for . 50

Datasheets found :: 258
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No. Part Name Description Manufacturer
31 1N942A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V Motorola
32 1N942B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V Motorola
33 1N943 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V Motorola
34 1N943A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V Motorola
35 1N943B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V Motorola
36 1N944 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V Motorola
37 1N944A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V Motorola
38 1N944B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V Motorola
39 1N945 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V Motorola
40 1N945A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V Motorola
41 1N945B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V Motorola
42 2N1613 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
43 2N1711 0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
44 2N3416 Silicon transistor. 50V, 500mA. General Electric Solid State
45 2N3417 Silicon transistor. 50V, 500mA. General Electric Solid State
46 2N3725 1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. Continental Device India Limited
47 2N4409 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE Continental Device India Limited
48 2N5086 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE Continental Device India Limited
49 2N5087 0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE Continental Device India Limited
50 2N5232 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
51 2N5232 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
52 2N5232A 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE Continental Device India Limited
53 2N5232A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
54 2N5249 Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
55 2N5249A Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. General Electric Solid State
56 2N5321 10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. Continental Device India Limited
57 2N6109 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
58 2N6290 40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 Continental Device India Limited
59 2N6371 High-power silicon N-P-N transistor. 50V, 117W. General Electric Solid State
60 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State


Datasheets found :: 258
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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