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Datasheets for . 6

Datasheets found :: 586
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No. Part Name Description Manufacturer
31 2N3859A Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. General Electric Solid State
32 2N4030 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
33 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
34 2N4036 1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. Continental Device India Limited
35 2N4235 6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
36 2N4238 6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. Continental Device India Limited
37 2N4899 Silicon P-N-P medium power transistor. 60V, 25W. General Electric Solid State
38 2N5191 40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
39 2N5296 Silicon N-P-N transistor. 60V, 36W. General Electric Solid State
40 2N5298 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
41 2N5302 High current, high power, high speed N-P-N power transistor. 60V, 200W. General Electric Solid State
42 2N5490 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
43 2N5491 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
44 2N5494 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
45 2N5495 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
46 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
47 2N5885 High-current, high-power, high-speed power transistor. 60V, 200W. General Electric Solid State
48 2N6038 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
49 2N6122 40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
50 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
51 2N6125 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
52 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
53 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
54 2N6344A 12-A silicon triac. 600 V. General Electric Solid State
55 2N6348A 12-A silicon triac. 600 V. General Electric Solid State
56 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
57 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
58 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
59 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
60 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State


Datasheets found :: 586
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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