No. |
Part Name |
Description |
Manufacturer |
31 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
32 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
33 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
34 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
35 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
36 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
37 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
38 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
39 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
40 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
41 |
2N5302 |
High current, high power, high speed N-P-N power transistor. 60V, 200W. |
General Electric Solid State |
42 |
2N5490 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
43 |
2N5491 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
44 |
2N5494 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
45 |
2N5495 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
46 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
47 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
48 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
49 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
50 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
51 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
52 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
53 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
54 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
55 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
56 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
57 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
58 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
59 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
60 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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