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Datasheets for .06

Datasheets found :: 75
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
31 NDH833N Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V Fairchild Semiconductor
32 NDH8436 Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V Fairchild Semiconductor
33 NDH853N Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V Fairchild Semiconductor
34 NDH854P Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V Fairchild Semiconductor
35 NX8562LB720-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1572.06 nm. Frequency 190.70 THz. Anode ground. FC-PC connector. NEC
36 NX8562LF720-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1572.06 nm. Frequency 190.70 THz. Anode floating. FC-PC connector. NEC
37 NX8563LB6066-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1606.06 nm. Frequency 186.60 THz. FC-PC connector. Anode ground. NEC
38 NX8563LB720-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1572.06 nm. Frequency 190.70 THz. FC-PC connector. Anode ground. NEC
39 NX8563LF720-BA CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1572.06 nm. Frequency 190.70 THz. FC-PC connector. Anode floating. NEC
40 RF1K49086 3.5A/ 30V/ 0.06 Ohm/ Dual N-Channel LittleFET Power MOSFET Intersil
41 RF1K49088 3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET Fairchild Semiconductor
42 RF1K49088 3.5A/ 30V/ 0.06 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET Intersil
43 STB20NE06 N - CHANNEL 60V - 0.06 Ohm - 20A D 2 PAK STripFET POWER MOSFET SGS Thomson Microelectronics
44 STB20NE06 N-CHANNEL 60V -0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET SGS Thomson Microelectronics
45 STB20NE06 N-CHANNEL 60V -0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET ST Microelectronics
46 STB20NE06L N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET SGS Thomson Microelectronics
47 STB20NE06L N - CHANNEL 60V - 0.06 Ohm - 20A TO-263 STripFET POWER MOSFET SGS Thomson Microelectronics
48 STB20NE06L N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET ST Microelectronics
49 STB20NE06LT4 N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET ST Microelectronics
50 STB6N60M2 N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package ST Microelectronics
51 STD16NE06L N-CHANNEL 60V - 0.06 OHM - 16A - DPAK STRIPFET POWER MOSFET ST Microelectronics
52 STD16NE06LT4 N-CHANNEL 60V - 0.06 OHM - 16A - DPAK STRIPFET POWER MOSFET ST Microelectronics
53 STD6N60M2 N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package ST Microelectronics
54 STF20NF06 N-CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET ST Microelectronics
55 STF20NF06L N-CHANNEL 60V - 0.06 & - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET ST Microelectronics
56 STF6N60M2 N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package ST Microelectronics
57 STP20NE06 N - CHANNEL 60V - 0.06 Ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET SGS Thomson Microelectronics
58 STP20NE06 N-CHANNEL 60V - 0.06 OHM - 20A TO-220/TO-220FP STRIPFET POWER MOSFET SGS Thomson Microelectronics
59 STP20NE06 N-CHANNEL 60V - 0.06 OHM - 20A TO-220/TO-220FP STRIPFET POWER MOSFET ST Microelectronics
60 STP20NE06FP N - CHANNEL 60V - 0.06 Ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET SGS Thomson Microelectronics


Datasheets found :: 75
Page: | 1 | 2 | 3 |



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