| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MTP12N06 |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 32 |
MTP12N06EZL |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 33 |
RF1S640 |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 34 |
RF1S640SM |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 35 |
RF1S640SM |
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs |
Intersil |
| 36 |
RF1S640SM9A |
18A, 200V, 0.180Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 37 |
RW |
Vitreous Wirewound Resistors, All welded construction, Ceramic core, Models acc.MIL-R-26 available, Complete vitreous coating for perfect humidity protection, Adjustable and non inductive design available, TC 100...180ppm/K |
Vishay |
| 38 |
STS2DNE60 |
DUAL N-CHANNEL 60V - 0.180 OHM - 2A SO-8 STRIPFET MOSFET |
SGS Thomson Microelectronics |
| 39 |
STS2DNE60 |
N - CHANNEL 60V - 0.180Ohm - 2A SO-8 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 40 |
STS2DNE60 |
DUAL N-CHANNEL 60V - 0.180 OHM - 2A SO-8 STRIPFET MOSFET |
ST Microelectronics |
| 41 |
TG1.8.180J |
Sensistor |
Microsemi |
| 42 |
TG1.8.180K |
Sensistor |
Microsemi |
| 43 |
TM1.4.180J |
Sensistor |
Microsemi |
| 44 |
TM1.4.180K |
Sensistor |
Microsemi |
| 45 |
TM1.8.180J |
Sensistor |
Microsemi |
| 46 |
TM1.8.180K |
Sensistor |
Microsemi |
| | | |
