| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ADS-CCD1201MM |
12-bit, 1.2MHz, sampling A/D optimized for CCD application |
Datel |
| 32 |
AP2012EC |
2.0 x 1.2mm SMD chip LED lamp. High efficiency red. Peak wavelength 627 nm. Lens type water clear. |
Kingbright Electronic |
| 33 |
AP2012MBC |
2.0 x 1.2mm SMD chip LED lamp. Blue. Peak wavelength 430 nm. Lens type water clear. |
Kingbright Electronic |
| 34 |
AP2012PBC |
2.0 x 1.2mm SMD chip LED lamp. Blue. Peak wavelength 468 nm. Lens type water clear. |
Kingbright Electronic |
| 35 |
AP2012SEC |
2.0 x 1.2mm SMD chip LED lamp. Super bright orange. Peak wavelength 610 nm. Lens type water clear. |
Kingbright Electronic |
| 36 |
AP2012SECK |
2.0 x 1.2mm SMD chip LED lamp. Super bright orange. Peak wavelength 610 nm. Lens type water clear. |
Kingbright Electronic |
| 37 |
AP2012SF4C |
In ra-red emitting diode. 2.0 x 1.2mm SMT LED. Peak wavelength 880 nm. Lens type water clear. |
Kingbright Electronic |
| 38 |
AP2012SGC |
2.0 x 1.2mm SMD chip LED lamp. Super bright orange. Peak wavelength 565 nm. Lens type water clear. |
Kingbright Electronic |
| 39 |
AP2012SRCPRV |
2.0 x 1.2mm SMD chip LED lamp. Super bright red. Peak wavelength 660 nm. Lens type water clear. |
Kingbright Electronic |
| 40 |
AP2012SURC |
2.0 x 1.2mm SMD chip LED lamp. Hyper red. Peak wavelength 640 nm. Lens type water clear. |
Kingbright Electronic |
| 41 |
AP2012SURCK |
2.0 x 1.2mm SMD chip LED lamp. Hyper red. Peak wavelength 640 nm. Lens type water clear. |
Kingbright Electronic |
| 42 |
AP2012SYC |
2.0 x 1.2mm SMD chip LED lamp. Super bright yellow. Peak wavelength 590 nm. Lens type water clear. |
Kingbright Electronic |
| 43 |
AP2012YC |
2.0 x 1.2mm SMD chip LED lamp. Yellow. Peak wavelength 590 nm. Lens type water clear. |
Kingbright Electronic |
| 44 |
AT1780 |
640kHz/1.2MHz, low-noise step-up current-mode PWM controller |
Aimtron |
| 45 |
ATP203 |
N-Channel Power MOSFET, 30V, 75A, 8.2mOhm, Single ATPAK |
ON Semiconductor |
| 46 |
ATP404 |
N-Channel Power MOSFET, 60V, 95A, 7.2mOhm, ATPAK |
ON Semiconductor |
| 47 |
ATUM-XX |
HEAT SHRINK BLK 1.2M |
Tyco Electronics |
| 48 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 49 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 50 |
BSC022N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SuperSO8, RDSon = 2.2mOhm, 50A, LL |
Infineon |
| 51 |
BSC032N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SuperSO8, RDSon = 3.2mOhm, 50A, LL |
Infineon |
| 52 |
BSC042N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SuperSO8, RDSon = 4.2mOhm, 50A, LL |
Infineon |
| 53 |
BSC052N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SuperSO8, RDSon = 5.2mOhm, 50A, LL |
Infineon |
| 54 |
BSO052N03S |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 5.2mOhm, 17A, LL |
Infineon |
| 55 |
C1210 |
Process C1210 CMOS 1.2mm Zero Threshold Devices |
IMP Inc |
| 56 |
C1227 |
HV BiCMOS 1.2mm 30V Double Metal - Double Poly |
IMP Inc |
| 57 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 58 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 59 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 60 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
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