No. |
Part Name |
Description |
Manufacturer |
31 |
1N5234C |
6.3 V, 0.5W Zener Diode |
Fairchild Semiconductor |
32 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
33 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
34 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
35 |
1N5521A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
36 |
1N5521B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
37 |
1N5521D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
38 |
1N746 |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
39 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
40 |
1N746 |
400mW, 3.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
41 |
1N746A |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
42 |
1N746A |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
43 |
1N746B |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
44 |
1N746C |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
45 |
1N746C |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
46 |
1N746D |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
47 |
1N746D |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
48 |
1N749 |
4.3 V, 400 mW silicon linear diode |
BKC International Electronics |
49 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
50 |
1N749 |
400mW, 4.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
51 |
1N749A |
4.3 V, 400 mW silicon linear diode |
BKC International Electronics |
52 |
1N749A |
500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
53 |
1N749B |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
54 |
1N749C |
500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
55 |
1N749C |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
56 |
1N749D |
500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
57 |
1N749D |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
58 |
1SMB5913A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 3.3 V. +-10% tolerance. |
Motorola |
59 |
1SMB5913B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 3.3 V. +-5% tolerance. |
Motorola |
60 |
1SMB5916A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 4.3 V. +-10% tolerance. |
Motorola |
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