No. |
Part Name |
Description |
Manufacturer |
31 |
1N5991 |
Diode Zener Single 4.3V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
32 |
1N5991C |
Diode Zener Single 4.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
33 |
1N6082 |
Diode Zener Single 4.3V 20% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
34 |
1N6082C |
Diode Zener Single 4.3V 2% 400mW 2-Pin DO-7 |
New Jersey Semiconductor |
35 |
1N746C |
Diode Zener Single 3.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
36 |
1N749C |
Diode Zener Single 4.3V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
37 |
74ALVT162821DGG |
2.5V/3.3V 20-bit bus-interface D-type flip-flop; positive-edge trigger with 30ohm termination resistors 3-State |
Philips |
38 |
74ALVT162821DL |
2.5V/3.3V 20-bit bus-interface D-type flip-flop; positive-edge trigger with 30ohm termination resistors 3-State |
Philips |
39 |
AMD K6 |
3.3V 233MHz AMD K6 Processor Specifications |
Advanced Micro Devices |
40 |
AS4LC1M16S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
41 |
AS4LC256K16E0-35JC |
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
42 |
AS4LC256K16E0-35TC |
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time |
Alliance Semiconductor |
43 |
AS4LC256K16E0-45JC |
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time |
Alliance Semiconductor |
44 |
AS4LC256K16E0-45TC |
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time |
Alliance Semiconductor |
45 |
AS4LC256K16E0-60JC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
46 |
AS4LC256K16E0-60TC |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time |
Alliance Semiconductor |
47 |
AS4LC256K16EO |
3.3V 256K x 16 CMOS DRAM (EDO) |
Alliance Semiconductor |
48 |
AS4LC2M8S1 |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM |
Alliance Semiconductor |
49 |
AS6VA25616 |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
50 |
AS6VA25616-BC |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
51 |
AS6VA25616-BI |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
52 |
AS6VA25616-TC |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
53 |
AS6VA25616-TI |
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable |
Alliance Semiconductor |
54 |
AS7C3256PFD16A |
3.3V 256K x 16/18 pipeline burst synchronous SRAM |
Alliance Semiconductor |
55 |
AS7C3256PFD16A-3.5TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz |
Alliance Semiconductor |
56 |
AS7C3256PFD16A-3.8TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz |
Alliance Semiconductor |
57 |
AS7C3256PFD16A-4TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz |
Alliance Semiconductor |
58 |
AS7C3256PFD16A-5TQC |
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz |
Alliance Semiconductor |
59 |
AS7C3256PFD18A |
3.3V 256K x 16/18 pipeline burst synchronous SRAM |
Alliance Semiconductor |
60 |
AS7C3256PFD18A-3.5TQC |
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz |
Alliance Semiconductor |
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