No. |
Part Name |
Description |
Manufacturer |
31 |
1N4778A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
32 |
1N4779 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
33 |
1N4779A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
34 |
1N4780 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
35 |
1N4780A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
36 |
1N4781 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
37 |
1N4781A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
38 |
1N4782 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
39 |
1N4782A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
40 |
1N4783 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
41 |
1N4783A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
42 |
1N4784 |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
43 |
1N4784A |
8.5 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
44 |
1N4785 |
8.5 volt temperature compensated zener reference diode |
Compensated Devices Incorporated |
45 |
1N5222A |
2.5 V, 20 mA, zener diode |
Leshan Radio Company |
46 |
1N5222AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-10%. |
Microsemi |
47 |
1N5222BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. Tolerance +-5%. |
Microsemi |
48 |
1N5222C |
2.5 V, 20 mA, zener diode |
Leshan Radio Company |
49 |
1N5222D |
2.5 V, 20 mA, zener diode |
Leshan Radio Company |
50 |
1N5222UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 2.5 V. |
Microsemi |
51 |
1N5236 |
500 mW silicon zener diode. Nominal zener voltage 7.5 V. |
Fairchild Semiconductor |
52 |
1N5236 |
500mW, 7.5 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
53 |
1N5236A |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
54 |
1N5236AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. Tolerance +-10%. |
Microsemi |
55 |
1N5236BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. Tolerance +-5%. |
Microsemi |
56 |
1N5236C |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
57 |
1N5236D |
7.5 V, 20 mA, zener diode |
Leshan Radio Company |
58 |
1N5236UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 7.5 V. |
Microsemi |
59 |
1N5343B |
7.5 V, 175 mA, 5 W glass passivated zener diode |
Fagor |
60 |
1N5527A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
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