| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 32 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 33 |
1N990 |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 34 |
1N990A |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 35 |
1SMZG06GP |
0.8 A Surface Mounted Glass Passivated Bridge |
Fagor |
| 36 |
1SMZG10GP |
0.8 A Surface Mounted Glass Passivated Bridge |
Fagor |
| 37 |
21-0136F |
PACKAGE OUTLINE 12,16L THIN QFN, 3x3x0.8mm |
MAXIM - Dallas Semiconductor |
| 38 |
21-0147C |
PACKAGE OUTLINE, 6L UDFN, 1.5 X 1.0 X 0.8mm |
MAXIM - Dallas Semiconductor |
| 39 |
23A017 |
Trans GP BJT NPN 50V 0.8A 3-Pin Case 55BT-2 |
New Jersey Semiconductor |
| 40 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 41 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 42 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 43 |
2N2217 |
Trans GP BJT NPN 30V 0.8A 3-Pin TO-5 |
New Jersey Semiconductor |
| 44 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 45 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 46 |
2N2218 |
Trans GP BJT NPN 30V 0.8A 3-Pin TO-39 |
New Jersey Semiconductor |
| 47 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 48 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 49 |
2N2218A |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 50 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 51 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 52 |
2N2219 |
Trans GP BJT NPN 30V 0.8A 3-Pin TO-39 |
New Jersey Semiconductor |
| 53 |
2N2219/51 |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 54 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 55 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 56 |
2N2219A |
Trans GP BJT NPN 40V 0.8A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 57 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 58 |
2N2221 |
Trans GP BJT NPN 30V 0.8A 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 59 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
| 60 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
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