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Datasheets for 00-

Datasheets found :: 18587
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1214-300 300 W, 50 V, 1200-1400 MHz common base transistor GHz Technology
32 1214-55 55 W, 28 V, 1200-1400 MHz common base transistor GHz Technology
33 1300-102-4XX 2.54mm IDC Connector Methode Electronics Incorporated
34 13003BR POWER TRANSISTORS(1.5A,300-400V,40W) MOSPEC Semiconductor
35 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. Anadigics Inc
36 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. Anadigics Inc
37 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
38 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
39 13PD100-ST The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... Anadigics Inc
40 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... Anadigics Inc
41 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... Anadigics Inc
42 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
43 1416-100 100 W, 50 V, 1400-1600 MHz common base transistor GHz Technology
44 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
45 1417-12A 12 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
46 1417-6A 6 W, 28 V, 1400-1700 MHz common base transistor GHz Technology
47 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
48 1496-3 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
49 150-10-210-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
50 150-10-304-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
51 150-10-306-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
52 150-10-308-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
53 150-10-310-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
54 150-10-312-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
55 150-10-314-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
56 150-10-316-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
57 150-10-318-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
58 150-10-320-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
59 150-10-322-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal
60 150-10-324-00-001 Dual-in-line pin headers Open frame Interconnect Precid-Dip Durtal


Datasheets found :: 18587
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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