No. |
Part Name |
Description |
Manufacturer |
31 |
DS1000-150 |
5-Tap Silicon Delay Line |
Dallas Semiconductor |
32 |
DS1000-150 |
5-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
33 |
DS1000-175 |
5-Tap Silicon Delay Line |
Dallas Semiconductor |
34 |
DS1000-175 |
5-Tap Silicon Delay Line |
MAXIM - Dallas Semiconductor |
35 |
FEDSM2000-11043 |
DUAL EMISSION LASER INDUCED FLUORESCENCE TECHNIQUE (DELIF) FOR OIL FILM THICKNESS AND TEMPERATURE MEASUREMENT |
etc |
36 |
HD68000-10 |
10MHz; V(cc): -0.3 to +7.0V; V(in): -0.3 to +7.0V; MPU (micro processing unit) |
Hitachi Semiconductor |
37 |
HD68000-12 |
12.5MHz; V(cc): -0.3 to +7.0V; V(in): -0.3 to +7.0V; MPU (micro processing unit) |
Hitachi Semiconductor |
38 |
HD68HC000-10 |
10MHz; V(cc): -0.3 to +7.0V; V(in): -0.3 to +7.0V; MPU (micro processing unit) |
Hitachi Semiconductor |
39 |
HD68HC000-12 |
12.5MHz; V(cc): -0.3 to +7.0V; V(in): -0.3 to +7.0V; MPU (micro processing unit) |
Hitachi Semiconductor |
40 |
ITT54104 |
J-K FLIP FLOPS is identical to the ITT9000-1 |
ITT Semiconductors |
41 |
ITT9000-1-Series |
High Speed TTL |
ITT Semiconductors |
42 |
KIM684000-10 |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
43 |
KMM594000-10 |
4M x 9 CMOS DRAM Memory Module |
Samsung Electronic |
44 |
LTC4000-1 |
High Voltage High Current Controller for Battery Charging with Maximum Power Point Control |
Linear Technology |
45 |
MB84VA2000-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM |
Fujitsu Microelectronics |
46 |
MB84VB2000-10 |
MCP (Multi-Chip Package) FLASH MEMORY 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
Fujitsu Microelectronics |
47 |
MLL6000-1 |
Zener Voltage Regulator Diode |
Microsemi |
48 |
MLO80100-01020 |
1000-1040 MHz, Surface mount voltage controlled oscillator EGSM |
MA-Com |
49 |
MRA1000-14L |
8.0dB, up to 1000MHz 14W broadband UHF Power Transistor |
Motorola |
50 |
MRA1000-14L |
VNF power transistor |
Motorola |
51 |
MRA1014 |
MICroAMP 2-6-12-35W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
52 |
MRA1014-12 |
MICroAMP 12W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
53 |
MRA1014-2 |
MICroAMP 2W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
54 |
MRA1014-35 |
MICroAMP 35W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
55 |
MRA1014-6 |
MICroAMP 6W, Broadband 1000-1400MHz, internally compensated, gold metalized, diffused ballast resistors |
TRW |
56 |
MZ1000-1 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 3.3V |
Motorola |
57 |
MZ1000-10 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 7.5V |
Motorola |
58 |
MZ1000-11 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 8.2V |
Motorola |
59 |
MZ1000-12 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 9.1V |
Motorola |
60 |
MZ1000-13 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 10V |
Motorola |
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