No. |
Part Name |
Description |
Manufacturer |
31 |
HYB3117800BSJ-70 |
2M x 8-Bit Dynamic RAM |
Siemens |
32 |
HYB5117800BSJ-50 |
2M x 8 Bit 2k 5 V 50 ns FPM DRAM |
Infineon |
33 |
HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
34 |
HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
35 |
HYB5117800BSJ-50 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
36 |
HYB5117800BSJ-50 |
2M x 8-Bit Dynamic RAM |
Siemens |
37 |
HYB5117800BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM |
Infineon |
38 |
HYB5117800BSJ-60 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
39 |
HYB5117800BSJ-60 |
2M x 8-Bit Dynamic RAM |
Siemens |
40 |
HYB5117800BSJ-70 |
2M x 8-Bit Dynamic RAM |
Siemens |
41 |
IDT75N42102S100BS |
32K x72 Network Search Engine |
IDT |
42 |
IDT79RV5000200BS272 |
MULTI-ISSUE 64-BIT MICROPROCESSOR |
IDT |
43 |
IDT79RV5000200BS272I |
MULTI-ISSUE 64-BIT MICROPROCESSOR |
IDT |
44 |
KM416C4000BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns |
Samsung Electronic |
45 |
KM416C4000BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns |
Samsung Electronic |
46 |
KM416C4000BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns |
Samsung Electronic |
47 |
KM416C4100BS-45 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 45ns |
Samsung Electronic |
48 |
KM416C4100BS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 50ns |
Samsung Electronic |
49 |
KM416C4100BS-6 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 4K refresh, 60ns |
Samsung Electronic |
50 |
KM416V4000BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
51 |
KM416V4000BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
52 |
KM416V4000BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
53 |
KM416V4000BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
54 |
KM416V4000BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
55 |
KM416V4000BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
56 |
KM416V4100BS-45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
57 |
KM416V4100BS-5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
58 |
KM416V4100BS-6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
59 |
KM416V4100BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
60 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
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