| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 32 |
CM400HA-28H |
Single IGBTMOD 400 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 33 |
CM400HA-34H |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 34 |
CM400HA-34H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 35 |
CM400HA-34H |
Single IGBTMOD 400 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 36 |
CM600HA-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 37 |
CM600HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 38 |
CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 39 |
CM600HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 40 |
CM600HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 41 |
CM600HA-24H |
Single IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 42 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 43 |
CM600HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 44 |
CM600HA-28H |
Single IGBTMOD 600 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 45 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 46 |
CM600HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 47 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 48 |
CM800HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 49 |
CM800HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 50 |
CM800HA-24H |
Single IGBTMOD 800 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 51 |
CM800HA-28H |
Single IGBTMOD 800 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 52 |
CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 53 |
CM800HA-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 54 |
CM800HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 55 |
CM800HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 56 |
QM1000HA-24B |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 57 |
QM1000HA-2HB |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 58 |
QM100HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 59 |
QM200HA-24 |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 60 |
QM200HA-2H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| | | |
