No. |
Part Name |
Description |
Manufacturer |
31 |
HM62W4100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
32 |
HM62W4100HCJP/HCLJP |
High-Speed SRAMs |
Hitachi Semiconductor |
33 |
HM62W4100HCLJP-10 |
4M High Speed SRAM (1-Mword x 4-bit) |
Hitachi Semiconductor |
34 |
HM62W4100HCLJP-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
35 |
MMBD7000HC |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
36 |
MMBD7000HC-7-F |
Discrete - Diodes (Less than 0.5A) - Switching Diodes |
Diodes |
37 |
PM1200HCE330 |
-High Voltage Intelligent Power Module (1200 Amperes/3300 Volts) |
Powerex Power Semiconductors |
38 |
PM1200HCE330-1 |
High Voltage Intelligent Power Module (1200 Amperes/3300 Volts) |
Powerex Power Semiconductors |
39 |
QM100HC-M |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
40 |
QM200HC-M |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
41 |
QM300HC-M |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
42 |
WS512K32F-100HCE |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
43 |
WS512K32F-100HCEA |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
44 |
WS512K32N-100HCE |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
45 |
WS512K32N-100HCEA |
100ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 |
White Electronic Designs |
46 |
WS512K32NV-100HC |
100ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
47 |
WS512K32NV-100HCA |
100ns; 3.3V power supply; 512K x 32 SRAM module |
White Electronic Designs |
48 |
Z8400HC1 |
Z80 CPU central processor unit, 8.0 MHz, plastic chip-carrier package |
SGS Thomson Microelectronics |
49 |
Z8400HC6 |
Z80 CPU central processor unit, 8.0 MHz, plastic chip-carrier package |
SGS Thomson Microelectronics |
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