Datasheets for 00LR

Datasheets found :: 45 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
31	KM684000LR-L	512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM	Samsung Electronic
32	KM684000LRI-10	512Kx8 bit CMOS static RAM, 100ns	Samsung Electronic
33	KM684000LRI-10L	512Kx8 bit CMOS static RAM, 100ns, low power	Samsung Electronic
34	KM684000LRI-7	512Kx8 bit CMOS static RAM, 70ns	Samsung Electronic
35	KM684000LRI-7L	512Kx8 bit CMOS static RAM, 70ns, low power	Samsung Electronic
36	KM684000LRI-8	512Kx8 bit CMOS static RAM, 85ns	Samsung Electronic
37	KM684000LRI-8L	512Kx8 bit CMOS static RAM, 85ns, low power	Samsung Electronic
38	MRF5S19100L	MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
39	MRF5S19100LR3	1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
40	MRF5S21100L	MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
41	MRF5S21100LR3	2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
42	MRF9200LR3	N−Channel Enhancement−Mode Lateral MOSFETs	Freescale (Motorola)
43	MRF9200LR3	880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistor	Motorola
44	MSASC150W100LR	LOW LEAKAGE SCHOTTKY DIODE	Microsemi
45	TMS3000LR	V(dd): -30 to +0.3V; 450mW; dual 25-bit static shift register	Texas Instruments

Datasheets found :: 45 Page: | 1 | 2 |