No. |
Part Name |
Description |
Manufacturer |
31 |
5962-03224 |
40W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Radiation Hardened Converter in a M3G Package. |
International Rectifier |
32 |
5962-03226 |
40W Total Output Power 28 Vin +5, +/-12 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03226 |
International Rectifier |
33 |
5962-03226 |
40W Total Output Power 28 Vin +5, +/-12 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03226 |
International Rectifier |
34 |
5962-03227 |
40W Total Output Power 28 Vin +5, +/-15 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03227 |
International Rectifier |
35 |
5962-03227 |
40W Total Output Power 28 Vin +5, +/-15 Vout Triple DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03227 |
International Rectifier |
36 |
F100322 |
Low Power 9-Bit Buffer |
National Semiconductor |
37 |
GS820322T-138 |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
38 |
K7B403225B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
39 |
K7B403225B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
40 |
K7B403625B K7B403225B K7B401825B |
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
41 |
K7B803625B K7B803225B K7B801825B |
256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
42 |
K7M403625B K7M403225B K7M401825B |
128Kx36 & 128Kx32 & 256Kx18-Bit Flow-Through NtRAM� Data Sheet |
Samsung Electronic |
43 |
K7M803625B K7M803225B K7M801825B |
256Kx36 & 256Kx32 & 512Kx18 Flow-Through NtRAM� Data Sheet |
Samsung Electronic |
44 |
RA203220 |
3200V, 2000A general purpose single diode |
Powerex Power Semiconductors |
45 |
RA203225 |
3200V, 2500A general purpose single diode |
Powerex Power Semiconductors |
46 |
TD203228 |
Phase Control SCR (2800-3600 Amperes Avg 3000-4500 Volts) |
Powerex Power Semiconductors |
47 |
TPS40322 |
Dual Output or Two-phase Synchronous Buck Controller |
Texas Instruments |
48 |
TPS40322RHBR |
Dual Output or Two-phase Synchronous Buck Controller 32-VQFN -40 to 125 |
Texas Instruments |
49 |
TPS40322RHBT |
Dual Output or Two-phase Synchronous Buck Controller 32-VQFN -40 to 125 |
Texas Instruments |
50 |
TSMBJ0322C |
Transient Voltage Protection Device 75 to 320 Volts |
Micro Commercial Components |
51 |
UPD29F032202AL-X |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flashmemory |
NEC |
52 |
UPD29F032202AL-Y |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory |
NEC |
53 |
UPD29F032202ALGZ-A85BX-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flashmemory |
NEC |
54 |
UPD29F032202ALGZ-A85BY-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory |
NEC |
55 |
UPD29F032202ALGZ-A85TX-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flashmemory |
NEC |
56 |
UPD29F032202ALGZ-A85TY-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory |
NEC |
57 |
UPD29F032202ALGZ-B85BX-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flashmemory |
NEC |
58 |
UPD29F032202ALGZ-B85BY-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory |
NEC |
59 |
UPD29F032202ALGZ-B85TX-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flashmemory |
NEC |
60 |
UPD29F032202ALGZ-B85TY-MJH |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory |
NEC |
| | | |