No. |
Part Name |
Description |
Manufacturer |
31 |
GLT4160L04-60J3 |
60ns; 4M x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
32 |
GLT4160M04-60J3 |
60ns; 4K x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
33 |
GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output |
G-LINK Technology |
34 |
IS41C44004-60J |
5V 4M x 4(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
35 |
IS41LV44004-60J |
3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
36 |
IS41LV44004-60JI |
3.3V 4M x 4(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
37 |
MDV04-600 |
HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO |
SGS Thomson Microelectronics |
38 |
MDV04-600 |
HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO |
ST Microelectronics |
39 |
MDV04-600RL |
HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO |
ST Microelectronics |
40 |
MRA0204-60 |
UHF Power Transistor 60W |
Motorola |
41 |
MRA0204-60V |
UHF Power Transistor 60W |
Motorola |
42 |
MRA0204-60VH |
UHF Power Transistor 60W |
Motorola |
43 |
PSMN004-60B |
N-channel TrenchMOS SiliconMAX standard level FET |
Nexperia |
44 |
PSMN004-60B |
N-channel TrenchMOS SiliconMAX standard level FET |
NXP Semiconductors |
45 |
PSMN004-60B |
N-channel enhancement mode field-effect transistor |
Philips |
46 |
PSMN004-60P |
N-channel enhancement mode field-effect transistor |
Philips |
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