No. |
Part Name |
Description |
Manufacturer |
31 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
32 |
K4E170411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
33 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
34 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
35 |
K4E660411D, K4E640411D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
36 |
K4E660411D, K4E640411D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
37 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
38 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
39 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
40 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
41 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
42 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
43 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
44 |
K4F170411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
45 |
K4F170411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
46 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
47 |
K4F170411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
48 |
K4F170411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
49 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
50 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
51 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
52 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
53 |
LCA0411/SC4 |
Carbon Film Resistors, Standard |
Vishay |
54 |
LMK04110 |
Clock Jitter Cleaner with Cascaded PLLs |
Texas Instruments |
55 |
LMK04110SQ/NOPB |
Clock Jitter Cleaner with Cascaded PLLs 48-WQFN -40 to 85 |
Texas Instruments |
56 |
LMK04110SQE/NOPB |
Clock Jitter Cleaner with Cascaded PLLs 48-WQFN -40 to 85 |
Texas Instruments |
57 |
LMK04110SQX/NOPB |
Clock Jitter Cleaner with Cascaded PLLs 48-WQFN -40 to 85 |
Texas Instruments |
58 |
LMK04111 |
Clock Jitter Cleaner with Cascaded PLLs |
Texas Instruments |
59 |
LMK04111SQ/NOPB |
Clock Jitter Cleaner with Cascaded PLLs 48-WQFN -40 to 85 |
Texas Instruments |
60 |
LMK04111SQE/NOPB |
Clock Jitter Cleaner with Cascaded PLLs 48-WQFN -40 to 85 |
Texas Instruments |
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