| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DS25CP104ATSQ/NOPB |
3.125 Gbps 4x4 LVDS Crosspoint Switch with Tx Pre-Emphasis & Rx Equalization 40-WQFN -40 to 85 |
Texas Instruments |
| 32 |
DS25CP104ATSQX/NOPB |
3.125 Gbps 4x4 LVDS Crosspoint Switch with Tx Pre-Emphasis & Rx Equalization 40-WQFN -40 to 85 |
Texas Instruments |
| 33 |
GS74104ATP-10 |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 34 |
GS74104ATP-10I |
10ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 35 |
GS74104ATP-12 |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 36 |
GS74104ATP-12I |
12ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 37 |
GS74104ATP-15 |
15ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 38 |
GS74104ATP-15I |
15ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 39 |
GS74104ATP-7 |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 40 |
GS74104ATP-7I |
7ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 41 |
GS74104ATP-8 |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 42 |
GS74104ATP-8I |
8ns 1M x 4 4Mb asynchronous SRAM |
GSI Technology |
| 43 |
KM416V1004AT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 44 |
KM416V1004AT-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 45 |
KM416V1004AT-8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
| 46 |
KM416V1004AT-F6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 47 |
KM416V1004AT-F7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 48 |
KM416V1004AT-F8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
| 49 |
KM416V1004AT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 50 |
KM416V1004AT-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 51 |
KM416V1004AT-L8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
| 52 |
MAX16004ATP+ |
Low-Voltage, Quad-/Hex-/Octal-Voltage µP Supervisors in TQFN |
MAXIM - Dallas Semiconductor |
| 53 |
MAX16004ATP+T |
Low-Voltage, Quad-/Hex-/Octal-Voltage µP Supervisors in TQFN |
MAXIM - Dallas Semiconductor |
| 54 |
MAX16804ATP+ |
High-Voltage, 350mA, High-Brightness LED Driver with Analog and PWM Dimming Control |
MAXIM - Dallas Semiconductor |
| 55 |
MAX16804ATP+T |
High-Voltage, 350mA, High-Brightness LED Driver with Analog and PWM Dimming Control |
MAXIM - Dallas Semiconductor |
| 56 |
MAX17504ATP+ |
4.5V–60V, 3.5A, High-Efficiency, Synchronous Step-Down DC-DC Converter with Internal Compensation |
MAXIM - Dallas Semiconductor |
| 57 |
MAX17504ATP+T |
4.5V–60V, 3.5A, High-Efficiency, Synchronous Step-Down DC-DC Converter with Internal Compensation |
MAXIM - Dallas Semiconductor |
| 58 |
MAX17604ATA+ |
4A Sink/Source Current, 12ns, Dual MOSFET Drivers |
MAXIM - Dallas Semiconductor |
| 59 |
MAX17604ATA+T |
4A Sink/Source Current, 12ns, Dual MOSFET Drivers |
MAXIM - Dallas Semiconductor |
| 60 |
MAX5704ATB+ |
Ultra-Small, Single-Channel, 8-/10-/12-Bit Buffered Output Voltage DACs with Internal Reference and SPI Interface |
MAXIM - Dallas Semiconductor |
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