| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KM416V4004BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 32 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
| 33 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
| 34 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
| 35 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 36 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 37 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 38 |
KM48C8004BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 39 |
KM48C8004BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 40 |
KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 41 |
KM48C8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 42 |
KM48C8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 43 |
KM48C8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 44 |
KM48V8004BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 45 |
KM48V8004BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 46 |
KM48V8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 47 |
KM48V8004BSL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 48 |
KM48V8004BSL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 49 |
KM48V8004BSL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 50 |
KM48V8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 51 |
KM48V8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 52 |
KM48V8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 53 |
KM48V8104BSL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 54 |
KM48V8104BSL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 55 |
KM48V8104BSL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 56 |
KMM372C804BS |
8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V |
Samsung Electronic |
| 57 |
KMM372F804BS |
8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V |
Samsung Electronic |
| 58 |
KMM372V404BS |
4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V |
Samsung Electronic |
| 59 |
M38510/32504BSA |
Octal D-type Flip-Flops With Enable 20-CFP -55 to 125 |
Texas Instruments |
| 60 |
MAX6404BS33-T |
3.300 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
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