No. |
Part Name |
Description |
Manufacturer |
31 |
2722 162 05781 |
VHF/UHF Broadband Circulators/Isolators, frequency range 225 to 400 MHz |
Philips |
32 |
27301.5 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. |
Littelfuse |
33 |
27401.5 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
34 |
27801.5 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. |
Littelfuse |
35 |
2N1057 |
Germanium PNP Transistor |
Motorola |
36 |
2N1057 |
GERMANIUM POWER TRANSISTORS |
New Jersey Semiconductor |
37 |
2N3057 |
Silicon planar epitaxial transistor |
Micro Electronics |
38 |
2N3057 |
Silicon NPN Transistor |
Motorola |
39 |
2N3057 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
40 |
2N3057 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
41 |
2N3057A |
NPN Transistor |
Microsemi |
42 |
2N3057A |
Silicon NPN Transistor |
Motorola |
43 |
2N3057A |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
44 |
2N3057A |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
45 |
2N4057 |
Silicon NPN Transistor |
Motorola |
46 |
2N5057 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
47 |
2N5057 |
Silicon PNP Transistor |
Motorola |
48 |
2N5057 |
PNP Transistor - Saturated Switches |
National Semiconductor |
49 |
2N5057 |
Trans GP BJT NPN 15V 3-Pin TO-18 Box |
New Jersey Semiconductor |
50 |
2N6050 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6057 |
Silicon Transistor Corporation |
51 |
2N6057 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
52 |
2N6057 |
Leaded Power Transistor Darlington |
Central Semiconductor |
53 |
2N6057 |
60V power complementary silicon transistor |
Comset Semiconductors |
54 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
55 |
2N6057 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
56 |
2N6057 |
12A Darlington complementary silicon power NPN Transistor 150W |
Motorola |
57 |
2N6057 |
Trans Darlington NPN 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
58 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
59 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
60 |
2N6057 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6050 |
Silicon Transistor Corporation |
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