| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HUFA76409P3 |
17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET� Power MOSFET |
Fairchild Semiconductor |
| 32 |
JANSR2N7292 |
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET |
Intersil |
| 33 |
JANSR2N7405 |
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET |
Intersil |
| 34 |
LH0071-0H |
LH0070 Series Precision BCD Buffered Reference |
National Semiconductor |
| 35 |
LH0071-1H |
LH0070 Series Precision BCD Buffered Reference |
National Semiconductor |
| 36 |
LH0071-2H |
LH0070 Series Precision BCD Buffered Reference |
National Semiconductor |
| 37 |
STB42N65M5 |
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
| 38 |
STE53NC50 |
N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET |
ST Microelectronics |
| 39 |
STF42N65M5 |
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220FP |
ST Microelectronics |
| 40 |
STI42N65M5 |
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK |
ST Microelectronics |
| 41 |
STL42N65M5 |
N-channel 650 V, 0.070 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
| 42 |
STP42N65M5 |
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
| 43 |
STS3DPFS40 |
P-CHANNEL 40V 0.070 OHM 3A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER |
SGS Thomson Microelectronics |
| 44 |
STS5PF30L |
P-CHANNEL 30V - 0.070 OHM - 5A SO-8 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 45 |
STS5PF30L |
P-CHANNEL 30V - 0.070 OHM - 5A SO-8 STRIPFET POWER MOSFET |
ST Microelectronics |
| 46 |
STS7C4F30L |
N-CHANNEL 30V-0.018 OHM-7A/P-CHANNEL 30V-0.070 OHM-4A SO-8 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 47 |
STS7C4F30L |
N-CHANNEL 30V-0.018 OHM-7A/P-CHANNEL 30V-0.070 OHM-4A SO-8 STRIPFET POWER MOSFET |
ST Microelectronics |
| 48 |
STW42N65M5 |
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 49 |
TE, TD |
Filter Inductor, Choice of Encapsulated (TE) or Dipped (TD), High Q |
Vishay |
| 50 |
TL32 |
Real Time System Testing MIT 16.070 Lecture 32 |
etc |
| 51 |
VTO-1070 |
VTO-1070 · 10.754 GHz Voltage Controlled Oscillator |
Agilent (Hewlett-Packard) |
| | | |
