No. |
Part Name |
Description |
Manufacturer |
31 |
BM308AN |
βM308AN Precision Operational Amplifier |
IPRS Baneasa |
32 |
BM308AN |
βM308AN Precision Operational Amplifier |
IPRS Baneasa |
33 |
BM308AN |
βM308AN Precision Operational Amplifier |
IPRS Baneasa |
34 |
BM308AN |
βM308AN Precision Operational Amplifier |
IPRS Baneasa |
35 |
BM308AN |
βM308AN Operational amplifier with reduced thermal drift |
IPRS Baneasa |
36 |
BM308AN |
βM308AN Operational amplifier with reduced thermal drift |
IPRS Baneasa |
37 |
DM74ALS1008AN |
Quadruple 2-Input AND Buffer |
Fairchild Semiconductor |
38 |
IN74HC08AN |
Quad 2-Input AND Gate |
INTEGRAL Semiconductor Devices |
39 |
LM308AN |
Super-Beta Operational Amplifier |
Intersil |
40 |
LM308AN |
SUPER GAIN OPERATIONAL AMPLIFIER |
Motorola |
41 |
LM308AN |
Operational Amplifiers |
National Semiconductor |
42 |
LM308AN |
SUPER GAIN OPERATIONAL AMPLIFIER |
ON Semiconductor |
43 |
LM308AN8 |
Operational Amplifiers |
Linear Technology |
44 |
MC74HC08AN |
Quad 2-Input AND Gate |
Motorola |
45 |
MC74HC08AN |
Quad 2-Input AND Gate |
ON Semiconductor |
46 |
MC74HCT08AN |
Quad 2-Input NAND Gate with LSTTL-Compatible Inputs |
Motorola |
47 |
MC74HCT08AN |
Quad 2-Input AND Gate with LSTTL-Compatible Inputs |
Motorola |
48 |
MH51208ANA-10H |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
49 |
MH51208ANA-10L |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
50 |
MH51208ANA-12H |
Access time: 120 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
51 |
MH51208ANA-12L |
Access time: 120 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
52 |
MH51208ANA-15H |
Access time: 150 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
53 |
MH51208ANA-15L |
Access time: 150 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
54 |
MH51208ANA-85H |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
55 |
MH51208ANA-85L |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
56 |
R8008ANX |
10V Drive Nch MOSFET |
ROHM |
57 |
S-80808ANNP-E7Y-T2 |
Low-voltage high-precision voltage detector |
Epson Company |
58 |
S-80808ANNP-E7Y-T2 |
LOW-VOLTAGE HIGH-PRECISION VOLTAGE DETECTOR |
Seiko Instruments Inc |
59 |
SN74AS1008AN |
Quadruple 2-Input Positive-AND Buffers/Drivers |
Texas Instruments |
60 |
SN74LV08ANSR |
Quadruple 2-Input Positive-AND Gates |
Texas Instruments |
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