No. |
Part Name |
Description |
Manufacturer |
31 |
22GQ100SCS |
30A 100V Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
32 |
2N3442 |
Power 10A 140V Discrete NPN |
ON Semiconductor |
33 |
2N6284 |
Power 20A 100V Darlington NPN |
ON Semiconductor |
34 |
2N6287 |
Power 20A 100V Darlington PNP |
ON Semiconductor |
35 |
300ND11 |
Silicon alloy diffused junction rectifier 350A 1000V |
TOSHIBA |
36 |
300QD11 |
Silicon alloy diffused junction rectifier 350A 1200V |
TOSHIBA |
37 |
300TD11 |
Silicon alloy diffused junction rectifier 350A 1500V |
TOSHIBA |
38 |
300WD11 |
Silicon alloy diffused junction rectifier 350A 1800V |
TOSHIBA |
39 |
30CLJQ100 |
30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
40 |
30CLJQ150 |
30A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
41 |
30LJQ100SCS |
30A 100V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package |
International Rectifier |
42 |
40749 |
20A 100V Silicon Controlled Rectifier |
RCA Solid State |
43 |
40753 |
20A 100V Silicon Controlled Rectifier |
RCA Solid State |
44 |
40757 |
20A 100V Silicon Controlled Rectifier |
RCA Solid State |
45 |
50NF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1000V |
TOSHIBA |
46 |
50QF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1200V |
TOSHIBA |
47 |
60LQ100SCS |
60A 100V Hi-Rel Schottky Discrete Diode in a SMD-1 package |
International Rectifier |
48 |
800UD21 |
Silicon alloy-diffused junction rectifier 800A 1600V |
TOSHIBA |
49 |
800UD22 |
Silicon alloy-diffused junction rectifier 800A 1600V |
TOSHIBA |
50 |
80CLQ150 |
80A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
51 |
80CLQ150SCS |
80A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
52 |
90CLQ100 |
90A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
53 |
90CLQ100SCS |
90A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
54 |
APT1001R1BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm |
Advanced Power Technology |
55 |
APT1001R3BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm |
Advanced Power Technology |
56 |
APT1001R6BN |
POWER MOS IV 1000V 8.0A 1.60 Ohm |
Advanced Power Technology |
57 |
APT1001RBN |
POWER MOS IV 1000V 11.0A 1.00 Ohm |
Advanced Power Technology |
58 |
APT1201R5BVR |
POWER MOS V 1200V 10A 1.500 Ohm |
Advanced Power Technology |
59 |
BD3541NUV |
3.0-5.5V 1.0A 1ch LDO |
ROHM |
60 |
BD3541NUV-E2 |
3.0-5.5V 1.0A 1ch LDO |
ROHM |
| | | |