| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CM200DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 32 |
CM200DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 33 |
CM200DU-12H |
Dual IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 34 |
CM200DU-12NFH |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 35 |
CM200DU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 36 |
CM200DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 37 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 38 |
CM200DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 39 |
CM200DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 40 |
CM200DU-24H |
Dual IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 41 |
CM200DU-24NFH |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 42 |
CM200DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 43 |
CM200DU-34KA |
Dual IGBTMOD KA-Series Module 200 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 44 |
CM300DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 45 |
CM300DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 46 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 47 |
CM300DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 48 |
CM300DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 49 |
CM300DU-12H |
Dual IGBTMOD�� U-Series Module 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 50 |
CM300DU-12NFH |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 51 |
CM300DU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 52 |
CM300DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 53 |
CM300DU-24F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 54 |
CM300DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 55 |
CM300DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 56 |
CM300DU-24H |
Dual IGBTMOD 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 57 |
CM300DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 58 |
CM300DU-34KA |
Dual IGBTMOD 300 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 59 |
CM350DU-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 60 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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